| 초록 |
Atomic layer chemical vapor deposition (ALCVD) of hafnium silicate films using a precursor combination of tetrakis(diethylamido)hafnium (TDEAHf) and tetra-n-butyl-orthosilicate (TBOS) was studied as alternative for conventional SiO2 gate dielectric. ALCVD temperature window in our study was 290-350 °C with a growth rate of 1.1 Å/cycle. We investigated the effect of deposition conditions, such as deposition temperature, pulse time of precursor and purge injection, on film growth. The saturated composition of Hf/(Hf+Si) ratio was 0.37 and impurity concentrations were less than 0.1 atomic %. Au/Hf-silicate/Si capacitors were fabricated using gold (Au) ex-situ thermal evaporation. The capacitance and leakage current density of Au/Hf-silicate/Si structures were analyzed before and after N2 rapid thermal annealing (RTA). This work was supported by a grant No.(R01-2002-000-00279-0(2002)) from Korea Science & Engineering Foundation. |
