| 학회 | 한국재료학회 |
| 학술대회 | 2012년 봄 (05/17 ~ 05/18, 무주덕유산리조트) |
| 권호 | 18권 1호 |
| 발표분야 | F. 광기능/디스플레이 재료(Optical Functional and Display Materials) |
| 제목 | The study of the electric characteristics of a-IGZO TFT with TiN/Cu electrode depending on the thickness of TiN as an adhesion layer |
| 초록 | Since the development of amorphous Indium-Gallium-Zinc-Oxide (a-IGZO), it has been investigated extensively due to its promising potentials for a channel layer of thin film transistors (TFTs). Their excellent electrical properties such as high mobility and on/off current ratio suggest these a-IGZO TFTs can be an alternative to conventional TFTs as switching elements for active matrix liquid crystal display (AMLCD). As the size of LCD panels increase, it becomes more and more important to decide the proper electrode materials in the TFT process. To achieve fast frame rates (＞240 Hz) and large area (＞70 in.), copper (Cu) is considered as one of the most appropriate materials to minimize the signal delay over large area due to its low resistivity. However, since Cu has a very high diffusivity and poor adhesion property with oxide films, it is also necessary to deposit the buffer layer such as Titanium nitride (TiN). TiN is primarily used as a buffer layer to prevent the diffusion of Cu in silicon based industries due to its high melting point, good thermal and chemical stability, high hardness and low diffusivity. In this study, we investigated the role of TiN/Cu electrode in oxide semiconductor by fabricating a-IGZO TFTs with various thicknesses of TiN/Cu electrodes. The results showed that the electrical characteristics of mobility (2.71 cm2/Vs to 0.87 cm2/Vs), subthreshold swing (0.34 V/dec to 0.83 V/dec) and current on/off ratio (5.89 x 107 to 7.08 x 107) were changed with decreasing the thickness of TiN from 20 nm to 5 nm. To verify these phenomenons, Interface chemical reaction was analyzed by transmission electron microscope (TEM). The more detailed chemical and electrical results will be discussed and presented. |
| 저자 | 이상헌, 박주현, 최학영, 신석윤, 함기열, 김지훈, 전형탁 |
| 소속 | 한양대 |
| 키워드 | TFT; a-IGZO; Cu; TiN |
