| 학회 |
한국재료학회 |
| 학술대회 |
2013년 봄 (05/23 ~ 05/24, 여수 엠블호텔(THE MVL)) |
| 권호 |
19권 1호 |
| 발표분야 |
C. 에너지/환경 재료(Energy and Environmental Materials) |
| 제목 |
Effect of Deposition Temperature and RF Power on Structural and Electrical Properties of In2O3 Thin Films Deposited by RF magnetron Sputtering |
| 초록 |
The structural, electrical, and optical properties of In2O3 thin films grown on glass substrates by radio-frequency (RF) magnetron sputtering were investigated. The structural properties and surface morphologies of In2O3 thin films were characterized by the X-ray diffraction. To analyze the optical properties of In2O3 thin films, the optical absorbance was measured in the wavelength range of 400 ∼ 1100 nm by using UV-VIS spectrophotometer. The optical bandgap energy of In2O3 thin films were calculated using the measured data. All the In2O3 thin films are grown as a Cubic phase with highly (222) preferred parameter. The structural, electrical, and optical properties of In2O3 thin films are strongly related to growth parameters, such as growth temperature, operating pressure, and Ar flow rate. In2O3 thin film shows the lowest resistivity of 1x10-3 Ωcm. The transmittance of In2O3 thin film in the visible range is above 85%. The optical band gap of In2O3 thin films is between 3.42 ∼ 3.75 eV. In this work, the characteristics of In2O3 as a transparent electrode for thin film solar cells are optimized by controlling deposition parameters. |
| 저자 |
Seung Jin Lee1, Chang Sik Son2, Shin Ho Cho1
|
| 소속 |
1Department of Materials Science & Engineering, 2Silla Univ. |
| 키워드 |
Solar cell |
| E-Mail |
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