화학공학소재연구정보센터
학회 한국재료학회
학술대회 2021년 가을 (11/24 ~ 11/26, 경주 라한호텔)
권호 27권 2호
발표분야 G. 나노/박막 재료 분과
제목 Wafer-scale homogeneous growth of high-quality tungsten disulfides via surfactant-assisted metal-organic chemical vapor deposition
초록  Two-dimensional semiconducting transition metal dichalcogenides (TMDs) have recently emerged as a promising material candidate for next-generation electronics and optoelectronics owing to their exceptional electrical and optical properties. For practical device applications, it is very crucial to achieve the large-area growth of TMDs films with high quality and good uniformity. Here, we will present the wafer-scale homogeneous growth of monolayer tungsten disulfides (WS2) using surfactant-assisted metal-organic chemical vapor deposition (MOCVD). By optimizing the growth conditions such as temperature, pressure, and molar ratio of precursors, the WS2 monolayer film was grown homogeneously on a 2-inch SiO2/Si wafer. The as-grown films exhibited uniform optical properties over the entire wafer area characterized by photoluminescence (PL) and Raman spectroscopy, whose optical quality is comparable to that of the exfoliated single crystal counterpart. The quality of WS2 films was further improved by introducing sodium chloride (NaCl) nanoparticles as a surfactant spin-coated on the wafer prior to the MOCVD growth. The average grain sizes of NaCl-assisted-grown films increased by an order of magnitude, from several tens of nanometers up to a micrometer, resulting in substantially improved optical characteristics compared to those of normally-grown films. These phenomena, generally observed for other TMDs, can be understood by suppressed nucleation and promoted lateral crystal growth aided by the surfactant. The detailed growth mechanism and the electrical properties of the Al2O3-passivated WS2 field-effect transistors will be further discussed.
저자 Do Hyoung Koo1, Hee Seong Kang2, Chul-Ho Lee1
소속 1KU-KIST Graduate School of Converging Science and Technology, 2Korea Univ.
키워드 Metal-Organic Chemical Vapor Deposition; Transition metal dichalcogenides; Tungsten disulfides
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