| 초록 |
This study for new high-k gate dielectric materials to replace SiO2 has drawn an enormous attention because of their potential in reducing gate leakage current, thereby keeping the equivalent oxide thickness thinner. Under these circumstances, the search for suitable high-k gate dielectric materials is still one of the most vital issues in advanced complementary metal-oxide-semiconductor (CMOS) technology. The BMN pyrochlore films grown at low temperature showed the stable dielectric properties, together with high dielectric constant (~45), small dielectric loss (~ 0.2%), and improved leakage current, which are the basic prerequisites for its extended application as possible gate dielectric in advanced CMOS technology. The BMN films for high-k gate dielectrics show many advantageous characteristics, such as excellent surface smoothness and morphology, high crystallization temperature, good interface properties with low oxide trap charge and interface state densities, low leakage current, and high breakdown strength. |
