| 초록 |
There has been a lot of interests on organic nonvolatile memories which makes it possible to fabricate devices with low cost and flexibility. Especially, PVDF-TrFE is one of the most promising materials for ferroelectric polymer memories. For memory device fabrication with either m/f/m structure or FeFET type memory, metal electrodes were deposited by vacuum process. However, there has been in need to apply new, simple method to deposit electrodes since conventional method is both costly and time-consuming. Herer, I demonstrate a new method to deposit metal electrodes by transfer printing and applied it to fabricate metal/insulator/metal structure where the dielectric insulator was PVDF-TrFE. Ferroelectric polymer capacitor with this printing method of depositing either top or bottom electrodes was successfully fabricated. Furthermore, we measured polarization-voltage hysteresis characteristics with various size depending on the overlapped area of top and bottom electrodes. |
