| 학회 |
한국고분자학회 |
| 학술대회 |
2013년 봄 (04/11 ~ 04/12, 대전컨벤션센터) |
| 권호 |
38권 1호 |
| 발표분야 |
차세대 메모리 소자용 고분자 나노기술 |
| 제목 |
Flexible Non-Volatile Ferroelectric Polymer Memory with Gate-Controlled Multilevel Operation |
| 초록 |
We have demonstrated a flexible non-volatile ferroelectric-gate field-effect transistor (Fe-FET) memory with multilevel switching behavior by precisely controlling the degree of remnant polarization of a ferroelectric poly(vinylidene fluoride) (PVDF) and its copolymers with trifluoroethylene (PVDF-TrFE) gate insulator which was dependent on the applied gate voltage. Four levels of discrete non-volatile source-drain currents were readily achieved with the application of an appropriate programming/reading gate voltage, and the memory exhibited an excellent data retention of more than 105 s and a notable multiple write/erase endurance of 102 cycles. Furthermore, our multilevel Fe-FET fabricated on a polymer substrate provided mechanical flexibility in which the characteristic 4-level reliable switching was also realized with more than 1000 bending cycles at a bending radius of 5.8 mm. |
| 저자 |
박철민 |
| 소속 |
연세대 |
| 키워드 |
organic memory; ferroelectric polymers; flexible memory; multilevel memory; field-effect-transistor memory
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| E-Mail |
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