| 학회 | 한국재료학회 |
| 학술대회 | 2006년 봄 (05/19 ~ 05/20, 경상대학교 ) |
| 권호 | 12권 1호 |
| 발표분야 | 반도체재료 |
| 제목 | Study on characteristics of cobalt film deposited by Remote Plasma ALD method |
| 초록 | Metal silicides have been widely used in Si integrated circuits as contacts, gate electrodes and interconnect materials. Among the metal silicides, CoSi2 is an attractive candidate for self-aligned silicide in ultra large scale integrated (ULSI) devices, due to its low resistivity, good thermal stability and high possibility to form epitaxial film. CoSi2 is typically formed by sputtering of cobalt followed by annealing. However, sputtering method exhibits poor step coverage and ion-induced substrate damage. Thus, chemical vapor deposition (CVD) method has been employed to solve above problems. In this respect, we introduced remote plasma atomic layer deposition (RPALD) technique to deposit cobalt thin film. Compared to CVD, RPALD is a promising technique to produce high quality and conformal films at low growth temperatures. We studied the process for the deposition of cobalt from cyclopentadienyl cobalt dicarbonyl, Co(C5H5)(CO)2. The process parameters were identified as precursor flow, plasma gas flow, substrate temperature. The impurity concentration in the films decreased with increasing plasma power. The carbon concentration of the film was confirmed as 7-8% at 100℃, and decreased gradually with increasing plasma power. The as-deposited cobalt film showed very smooth surface and high step coverage. Additionally, CoSi2 transformed from Ti capped cobalt film followed by RTA showed excellent interface roughness. |
| 저자 | 김근준, 이근우, 한세진, 정우호, 배규열, 전형탁 |
| 소속 | 한양대 |
| 키워드 | cobalt; silicide; ALD |
