| 학회 |
한국재료학회 |
| 학술대회 |
2018년 봄 (05/16 ~ 05/18, 삼척 쏠비치 호텔&리조트) |
| 권호 |
24권 1호 |
| 발표분야 |
B. 나노화학/바이오 분과 |
| 제목 |
Development of AlN Thick Films as Alternative AlN Bulk Ceramic Substrates for High-Power Electronic Packages |
| 초록 |
The efficient removal of heat generated from the semiconductor junction to the surrounding environment has become a critical issue of high-power electronic packages. For effective heat dissipation in high-power electronic packages, aluminum nitride (AlN) thick films (thickness range: 30 ~100m) as a thermally conductive dielectric layer were successfully developed onto an Al substrate using granule spray in vacuum (GSV). Thermal conductivity values of the films were obtained from the two-layer mode in laser flash analyzer; the values (＜11.5W/m∙K) were much lower than those of bulk ceramics. However, All films showed the excellent dielectric strength (＞68kV/mm) and the AlN-coated Al substrate systems exhibited remarkably low thermal resistance, compared to AlN bulk-ceramic system. It could, therefore, be expected that the structure, which consisted of an AlN thick film and Al substrate without a thermal interface material layer, would be a potential candidate as a heatsink for high-power electronic applications. |
| 저자 |
한병동1, 허태희2, 안철우1, 최종진1, 김종우1, 윤운하1, 김명호2
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| 소속 |
1재료(연), 2창원대 |
| 키워드 |
<P>AlN; Heat dissipation; Thermal conductivity; Thermal resistance</P>
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| E-Mail |
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