| 학회 |
한국재료학회 |
| 학술대회 |
2019년 가을 (10/30 ~ 11/01, 삼척 쏠비치 호텔&리조트) |
| 권호 |
25권 2호 |
| 발표분야 |
C. 에너지 재료 분과 |
| 제목 |
Characteristics of phosphorus doped silicon layer in tunnel oxide passivated contact solar cell |
| 초록 |
Today, many group presented high efficiency Si solar cells over 25% in efficiency. One of the promising structures is the TOPCon cell presented by Fraunhofer ISE in Germany. Recently, a 25.1% tunnel oxide passivated contact (TOPCon) cell based on n-type Si was reported. The feature of this cell is the excellent interface passivation quality achieved by applying a thin (＜ 2 nm) oxide layer. The oxide layer was located between the doped poly-Si and the Si substrate. In this study, we fabricated TOPCon cell by depositing phosphorus doped a-Si and poly-Si each. They act as carrier-selective contacts and, thereby, lead to a significant reduction of the cell's recombination current. We compared these layers by various methods and could get good results from the phosphorus doped Si contact in TOPCon solar cell. |
| 저자 |
Hoyoung Song1, Changhyun Lee2, Jee Woong Yang1, Ji Yeon Hyun2, Dongjin Choi1, HyunJung Park2, Soohyun Bae1, Se Jin Park2, Hyunju Lee1, Yoonmook Kang2, Hae-Seok Lee1, Donghwan Kim2
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| 소속 |
1Department of Materials Science and Engineering, 2Korea Univ. |
| 키워드 |
tunnel oxide; amophous silicon; poly silicon; passivation quality
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| E-Mail |
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