| 학회 |
한국고분자학회 |
| 학술대회 |
2021년 가을 (10/20 ~ 10/22, 경주컨벤션센터) |
| 권호 |
46권 2호 |
| 발표분야 |
분자전자 부문위원회 Ⅰ,Ⅱ |
| 제목 |
Critical Factors of Diarylethene for High Performance Photo-programmable Polymer Transistor: Crystallographic Compatibility, Quantum Yield, and Fatigue Resistance |
| 초록 |
We achieved the enhancement of crystallographic compatibility by locating diarylethene (DAE) preferentially in the vicinity of intercrystallite tie-chains is mainly dependent on the overall molecular volume of DAE. To precisely control each of these determining factors of DAE-embedded polymer FETs, we synthesized and systematically analyzed a series of DAE. We strategically substituted functional groups at the specific reaction site of DAE and it leads to an ideal molecular switch for high-performance photoprogrammable polymer FETs with high photoprogrammable switching ratios of 4405, as well as high electrical fatigue resistance of up to 100 photoprogrammable switching steps. Here, we argue that crystallographic compatibility, quantum yield, and fatigue resistance are three important factors that DAE should simultaneously satisfy to realize high-performance photoprogrammable polymer field-effect transistors (FETs). |
| 저자 |
송재섭, Syed Zahid Hassan, 유성훈, 정대성
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| 소속 |
포항공과대 |
| 키워드 |
Molecular switch; Diarylethene; Polymer; Transistor; OFET; Fatigue resistance; Quantum yield
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| E-Mail |
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