| 학회 |
한국고분자학회 |
| 학술대회 |
2007년 봄 (04/12 ~ 04/13, 제주 ICC) |
| 권호 |
32권 1호 |
| 발표분야 |
고분자 구조 및 물성 |
| 제목 |
Studies on electric field-induced ferroelectric switching, fatigue and capacitance behavior in P(VDF-TrFE) copolymer ultra-thin films for non-volatile memory applications |
| 초록 |
Ferroelectric P(VDF-TrFE) films in field effect transistors have potential applications in the fabrication of organic non-volatile memory devices. In this study, ~100 nm thick films of P(VDF-TrFE) (72/28) copolymer and its blends with PMMA (5 and 10 wt%) were sandwiched between two different metal electrodes to form a simple MFM device. Their P-E and C-V measurements were carried out with special emphasis on faster dipole switching time, lower fatigue and to find a suitable and faster method to know whether the data written on the memory bit is in either '1' or '0' state. From P-E studies, VDF 72% copolymer exhibited irreversible ferroelectric dipole switching at and above 11 V. Switching time increased with the incorporation of PMMA and with increasing thickness. Acknowledgement : This project was supported by The National Research Program for the 0.1 Terabit Non-volatile Memory Development sponsored by Korea Ministry of Commerce, Industry and Energy. |
| 저자 |
최창우, A. Anand Prabu, 윤 선, 김갑진
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| 소속 |
경희대 |
| 키워드 |
P(VDF-TrFE); Ferroelectric switching; Fatigue
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| E-Mail |
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