| 학회 | 한국공업화학회 |
| 학술대회 | 2021년 봄 (05/12 ~ 05/14, 부산 벡스코(BEXCO)) |
| 권호 | 25권 1호 |
| 발표분야 | 포스터-디스플레이 |
| 제목 | Fabrication of indium-gallium-zinc-oxide TFT using self-aligned imprint lithography |
| 초록 | All microelectronic devices, such as thin film transistors (TFTs), are manufactured using a bottom-up process with thin film deposition and photolithographic patterning processes. As these devices become smaller in size, pattern alignment in each successive photolithography process has emerged as an important issue when fabricating fine and complex structures. To eliminate these problems, a top-down process called SAIL (Self-Aligned Imprint Lithography) has been proposed. In this study, thin film transistor(TFT) was successfully fabricated by the imprint lithography and plasma etching processes without using a photolithography process. A 50×50μm2 channel-sized TFT with connecting metal lines was completed using one imprint process and continuous etching process in one chamber. The TFT exhibited a linear mobility of 14.5cm2/Vs, and a current on/off ratio of 2.07 × 105 at the drain voltage of 0.5V. |
| 저자 | 나창연, 조성민 |
| 소속 | 성균관대 |
| 키워드 | IGZO; self-align imprint lithography; plasma etch |
