| 학회 |
한국고분자학회 |
| 학술대회 |
2016년 봄 (04/06 ~ 04/08, 대전컨벤션센터) |
| 권호 |
41권 1호 |
| 발표분야 |
분자전자 부문위원회 I |
| 제목 |
Black Phosphorus Nonvolatile Transistor Memory |
| 초록 |
In this communication, we fabricated the nano floating gate transistor memories using mechanically−exfoliated few−layer BP channels and gold nanoparticle charge trapping layers. The cross−linked poly−4−vinylphenol (cPVP) and SiO2 were utilized as the tunneling and blocking gate dielectrics, respectively. The hole carriers in the BP channel could be trapped effectively in the AuNPs upon applying negative gate voltages, while the trapped charges in the AuNPs could be detrapped under positive gate voltages. By carefully controlling the number of the trapped/detrapped charges, five−level data storage having sufficient reading margins in the signal could be achieved over three orders of span in the current level. The resulting BP−NFGTMs exhibited excellent memory performances, including a large memory window (58.2 V), stable retention (104 s), and cyclic endurance (200 cycles). |
| 저자 |
이다인1, 최용석1, 황의헌1, 강문성2, 이승우1, 조정호1
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| 소속 |
1성균관대, 2숭실대 |
| 키워드 |
black phosphorus; nonvolatile memory transistor; multi-bit memory
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| E-Mail |
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