| 학회 | 한국재료학회 |
| 학술대회 | 2014년 봄 (05/15 ~ 05/16, 창원컨벤션센터) |
| 권호 | 20권 1호 |
| 발표분야 | A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 | Introduction of SIO2 mask layer for Selective Area Growth of GaN on Patterned Sapphire Substrate |
| 초록 | GaN is commercially used in various optoelectronics devices such as light emitting diodes (LEDs), laser diodes (LDs), and UV detectors. But it is still difficult to fabricate high-power GaN-based devices. The main inefficient factor of GaN-based devices is the large difference in the lattice constant and thermal expansion coefficient between the GaN and sapphire substrate. By reducing the threading dislocations between the GaN and sapphire substrate, high-power GaN-based devices can be possible. Recently, epitaxial lateral overgrowth (ELOG) on patterned sapphire substrate (PSS) is effective process to reduce the threading dislocations (TDDs) and increase the light extraction efficiency for high power GaN-based LEDs. For ELOG, selective area growth(SAG) is needed and the ion implantation process can be the solution. In this study, we propose a new approach to the ion implantation masking method using SIO2 layer. By using the isotropic growth and anisotropic etch characteristics of SIO2, we can make mask layer on the PSS for ion implantation. This approach can improve the time and cost efficiency by skipping the lithography step in the ion implantation process. In the future, we will proceed verification of mask effectiveness by making full process of ELOG process. |
| 저자 | 배선호1, 변동진1, 김대식1, 강병훈1, 정서주1, 이창민1, 고형덕2 |
| 소속 | 1고려대, 2한국과학기술원 다원물질 융합 (연) |
| 키워드 | SIO2 MASK LAYER; PSS; GAN |
