| 초록 |
In the past two decades, Organic field-effect transistors(OFETs) have researched for their some strengths for low-cost, large-area, flexible electronics. Their development also are applied to flexible electronic paper and organic displays. However, performances can be improved investigating interface contact as well as focusing on singular part(organic semiconductor layer, dielectric layer, source/drain(S/D) and gate electrodes). By dealing with interlayer between the S/D electrodes and semiconductor layer, we can control the performances of OFETs with graphene Oxide(GO). one layer graphene has much higher performance than GO, but GO can be transformed by substitution of H atom. The surface functionalization of GO was presented from Korea Institute of Science and Technology. GO having different functional group will show various characteristic. Through making reduced GO with annealing at 220℃, we also watched better performances |
