| 학회 |
한국재료학회 |
| 학술대회 |
2018년 봄 (05/16 ~ 05/18, 삼척 쏠비치 호텔&리조트) |
| 권호 |
24권 1호 |
| 발표분야 |
F. 광기능/디스플레이 재료 분과 |
| 제목 |
Evaluation of Properties of GaN by Growth Conditions of AlN Buffer Layer Using Mass-Production Sputtering Equipment |
| 초록 |
The effect of an aluminium nitride(AlN) buffer layer for fabricating a high-quality gallium nitride(GaN) template has been studied. An AlN buffer layer helps to grow high-quality GaN epitaxial layer by reducing lattice mitmatch between sapphire and GaN. In this study, we evaluated the properties of GaN by different growth conditions of AlN buffer layer. AlN buffer layers were fabricated by mass-production sputtering equipment under conditions such as thickness, N2 plasma treatment, N2 flow, temperature, and power. GaN was grown by metal organic chemical vapor deposition(MOCVD). The crystallinity of AlN and GaN was confirmed by x-ray diffraction(XRD). Surface and cross sectional images of full-merged GaN were observed by scanning electron microscopy(SEM). |
| 저자 |
Kyu-Yeon Shim, Woo-Seop Jeong, Seung-Hee Cho, Hyun-A Ko, Doo Won Lee, Min Joo Ahn, Dongjin Byun
|
| 소속 |
Korea Univ. |
| 키워드 |
AlN; GaN; buffer; crystallinity
|
| E-Mail |
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