| 학회 |
한국고분자학회 |
| 학술대회 |
2019년 가을 (10/09 ~ 10/11, 제주컨벤션센터) |
| 권호 |
44권 2호 |
| 발표분야 |
대학원생 구두발표 (영어발표, 발표15분) |
| 제목 |
Charge trapping and release under illumination in an ambipolar transistor based on single laterally stacked PTCDI-C5 / C8-BTBT crystal |
| 초록 |
We present the photoresponsive properties of a transistor based on one laterally stacked PTCDI-C5 / C8-BTBT crystal. The change of electrical characteristics under illumination at different irradiance levels was studied, and the dynamic behavior under light pulses was evaluated. It was found, that the increased current under illumination can be attributed to the photogating effect caused by trapped photogenerated charges. The charge trapping and release mechanism was characterized by analyzing the current increase under illumination, and decrease after ceasing the illumination. The transient current curves were approximated by the trapping/release of photogenerated charge carriers at distinct shallow and deep trap sites. The measured irradiance dependence of trapping and release was used to refine our understanding of the photogating effect in the laterally stacked ambipolar crystal. |
| 저자 |
터르쇼이 게르게이1, 표승문2
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| 소속 |
1Konkuk Univ., 2건국대 |
| 키워드 |
ambipolar; transistor; photoresponse; organic electronics
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| E-Mail |
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