학회 |
한국재료학회 |
학술대회 |
2015년 봄 (05/14 ~ 05/15, 구미코) |
권호 |
21권 1호 |
발표분야 |
A. 전자/반도체 재료 |
제목 |
Control of preferred orientation and residual stress of ZnO prepared by Atomic Layer Deposition |
초록 |
ZnO is a attractive semiconductor material with inexpensive cost and unique property. However, residual stress induced by film growth process remains a drawback. So we have researched the effect of substrate temperature and film thickness on ZnO thin film prepared by Atomic Layer Deposition method. Si (100) substrate was used and the structural properties were examined by XRD(X-Ray Diffractometer) and SEM(Scanning Electron Microscopy). The residual stress |
저자 |
배선호, 김대식, 정서주, 정우섭, 이지은, 조승희, 박준성, 변동진
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소속 |
고려대 |
키워드 |
<P>ZnO; ALD; Residual Stress; Si 100</P>
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E-Mail |
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