| 초록 |
Atomic layer deposition (ALD) method has been widely used for the deposition of inorganic layer with good barrier properties due to the advantage of atomic-level control of film thickness, nearly defect-free and uniformity. In this study, Al2O3 layers were fabricated on polyethylene naphthalate (PEN) substrate using low frequency plasma-enhanced atomic layer deposition (PEALD) for barrier property enhancement. Trimethylaluminum (TMA) and oxygen plasma were used as precursor and reactant materials, respectively. We studied on the properties of process parameters such as plasma power and oxygen partial pressure. And the influence of O/Al ratio was investigated with respect to physical and chemical properties of layers such as barrier property, microstructure and chemical composition. The O/Al ratio of the Al2O3 layer approached the ideal value to achieve the great enhancement of barrier properties. |
