| 초록 |
Plasma-enhanced atomic layer deposition (PEALD) method is known to produce highly uniform and conformal films, and can therefore be used to deposit high-quality single inorganic barrier layer. However, single inorganic barrier layers provide at best only two to three orders of magnitude improvement over the transmission rates of the plastic substrates due to pin-hole or void. Thus, the barrier layers need defect-sealing to prevent pinhole and pore. In this study, defect-sealed-Al2O3 barrier layers have been fabricated on polyethylene naphthalate substrates for barrier property enhancement. The Al2O3 layer was deposited by low-frequency PEALD process using trimethylaluminum and oxygen plasma as precursor and reactant materials, respectively. Self-assembled monolayers were prepared by using 1-dodecanethiol and anhydrous ethanol for defect-sealing of Al2O3 barrier layer. The defect-sealed-Al2O3 layer showed better barrier performance than single Al2O3 layer. |
