| 학회 |
한국재료학회 |
| 학술대회 |
2016년 가을 (11/16 ~ 11/18, 경주 현대호텔) |
| 권호 |
22권 2호 |
| 발표분야 |
G. 나노/박막 재료 분과 |
| 제목 |
Electrical Property Variation of Naturally-Occurring MoS2 Crystals Based on Capacitance-Voltage Measurement |
| 초록 |
Recently, transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have been widely studied for various applications because of their interesting electronic, optoelectronic, and chemical properties. MoS2 is the most investigated TMD partly because thin flakes of MoS2 can be easily available from naturally-occurring bulk MoS2 single crystals by mechanical exfoliation. While MoS2 field-effect transistors based on naturally-occurring MoS2 crystals showed very promising device performance, little attention has been given to the variability of electrical properties of naturally-occurring MoS2 crystals. In this presentation, we report the variability of semiconducting properties of naturally-occurring MoS2 crystals by capacitance-voltage (C-V) measurement on Au-Al2O3-MoS2 metal-insulator-semiconductor capacitors. We found the wide variation of semiconducting properties of naturally-occurring MoS2 crystals including conduction type and the distribution of carrier concentration through C-V measurement. These results confirm the intrinsic variability of semiconducting properties of naturally-occurring MoS2 crystals suggesting the importance of synthesizing high-quality TMDs |
| 저자 |
박선영1, 김성열1, 최유라1, 김명준2, 신현정2, 김지영3, 최웅1
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| 소속 |
1국민대, 2성균관대, 3Univ. of Texas at Dallas |
| 키워드 |
<P>MoS<SUB>2</SUB>; TMDs; UV-O<SUB>3</SUB> treatment; Atomic Layer Deposition; High-k dieletric</P>
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| E-Mail |
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