| 초록 |
Direct synthesis of graphene on three-dimensional (3D) structures would be of great importance for fundamental research and various applications, since 3D structured 2D materials not only possess the intrinsic properties of 2D materials, but also offer advanced functions, such as higher surface/volume ratio or improved surface area. A template-directed chemical vapor deposition (CVD) technique demonstrated the synthesis of complex 3D graphene by growing graphene on 3D metallic templates (e.g., metal foams and nanowires). However, those 3D graphene films could not sustain its 3D form when the inner conducting metal template is removed, and thereby cannot directly be applied to 3D field-effect transistor (FET) sensor fabrication. Direct growth of graphene films on non-metallic 3D structures has also been tested by several groups, yet they are much thicker than those on the metallic templates, not suitable for FET sensors. Here, to overcome such limitations of previous approaches, we developed a new strategy for synthesizing 3D graphene at the metal/dielectric interface. The advantages of this approach include (i) growth of either single or multi-layer graphene (by the choice of metal), (ii) conformal coating of graphene on complex structures, and (iii) direct use of the graphene on dielectrics for FET sensors. Moreover, we demonstrated the transfer of 3D shaped graphene onto the elastomeric replica with minimal residual stress/strain and mismatch of the contact area between the 2D materials and 3D target materials. |
