| 학회 |
한국재료학회 |
| 학술대회 |
2010년 가을 (11/11 ~ 11/12, 무주리조트) |
| 권호 |
16권 2호 |
| 발표분야 |
B. Nano materials and processing Technology(나노소재기술) |
| 제목 |
Effect of pH on the Performance of Inorganic Aqueous ZnO Thin Film Transistors |
| 초록 |
The aqueous precursor-derived ZnO semiconductor is a promising alternative to organic semiconductors and amorphous silicon materials in applications requiring transparent thin-film transistors at low temperatures. The pH in the aqueous solution is an important factor to determine the device performance of ZnO-TFTs. Using a basic aqueous solution, the ZnO transistor annealed at 150℃ exhibited a high field-effect mobility (0.42 cm2 V-1s-1) and excellent on/off ratio (10^6). In contrast, the ZnO layer annealed at 150oC prepared from an acidic solution was inactive. Chemical and structural analyses confirmed that the variation of the device characteristics originates from the existing state difference of Zn in solution. The hydroxylated species is stable in basic conditions, which involves a lower energy pathway for the solution-to-solid conversion, whereas the hydrated zinc cation undergoes more complex reactions that occur at a higher temperature. Our results suggest that the pH plays a critical role in the preparation of aqueous precursor-based ZnO-TFTs which demonstrate high performance at low temperature. |
| 저자 |
전태환, 문주호, 송근규
|
| 소속 |
연세대 |
| 키워드 |
Oxide semiconductor; thin film transistors; solution processing; aqueous solution; pH
|
| E-Mail |
|
