| 학회 |
한국고분자학회 |
| 학술대회 |
2015년 봄 (04/08 ~ 04/10, 대전컨벤션센터) |
| 권호 |
40권 1호 |
| 발표분야 |
분자전자 부문위원회 II |
| 제목 |
Proton conductor-gated Graphene Transistor |
| 초록 |
Graphene has its outstanding electronic properties. And PSSH has helmholtz double layer which can affect high capacitance and mobility. We are going to combine these two materials to improve capacitive, transfer and transient current characteristics. Furthermore, we can more improve by changing NaCl density and anions like F-, Br- and I-. The hydrate ionic size and quantity of anion improve and change these characteristics. We are going to make transistor Cr-Au source and drain on SiO2 wafer by thermal evaporate. CVD graphene are going to use in transistor channel and patterned by photolithography. PSSH will mix with various density of NaCl and anions. Capacitors are going to using Si wafer and aluminium. This research can improve from existing graphene transistor. Also, affects of NaCl density and various anion to Helmholtz layer must be sufficient theoretical value in this research area. |
| 저자 |
김현우1, 김범준1, 강문성2, 손기군1, 조정호1
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| 소속 |
1성균관대, 2숭실대 |
| 키워드 |
polyelectrolytes; graphene; field-effect transistors
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| E-Mail |
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