| 학회 |
한국고분자학회 |
| 학술대회 |
2014년 가을 (10/06 ~ 10/08, 제주 ICC) |
| 권호 |
39권 2호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Transparent, Low-power Pressure Sensor Matrix based on Coplanar-gate Graphene Transistors |
| 초록 |
Large-area integration of pressure sensor matrix is a primary point for the realization of e-skin. Here we demonstrated novel device architecture for transparent and low-voltage graphene pressure sensor matrix onto plastic and rubber substrates. The combination of the graphene monolayer and high capacitance ion gel gate dielectric yielded high transparancy and low-power consumption of the device. Importantly, the coplanar-gate configuration of the graphene transistor greatly simplifies the fabrication of the e-skin matrix based only on two materials, graphene and ion gel. The resulting devices exhibited excellent device performance such as high transparency of ~ 80 % in visible range, low voltage operation below 2 V, high pressure sensitivity of 0.12 kPa-1, and excellent mechanical durability over 2500 cycles. This design concept for e-skin represents a significant step in the application of graphene to flexible and stretchable electronics. |
| 저자 |
손기군1, 김도환2, 조길원3, 조정호4
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| 소속 |
1성균관 대, 2숭실대, 3포항공과대, 4나노과학기술학과 |
| 키워드 |
pressure sensor matrix; graphene field effect transistor; transparent and low power E-skin
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| E-Mail |
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