| 학회 |
한국고분자학회 |
| 학술대회 |
2017년 가을 (10/11 ~ 10/13, 제주컨벤션센터) |
| 권호 |
42권 2호 |
| 발표분야 |
기능성 고분자 |
| 제목 |
Metal-oxide assisted surface treatment of polyimide gate insulators for high-performance organic thin-film transistors |
| 초록 |
We developed a facile method for treating polyimide-based organic gate insulator (OGI) surfaces with self-assembled monolayers (SAMs) by introducing metal-oxide interlayers, called the metal-oxide assisted SAM treatment (MAST). To create sites for surface modification with SAM materials on polyimide-based OGI (KPI) surfaces, the metal-oxide interlayer, here amorphous alumina (α-Al2O3), was deposited on the KPI gate insulator using spin-coating via a rapid sol–gel reaction. The SAM of octadecylphosphonic acid (ODPA) was successfully treated by spin-coating onto the α-Al2O3-deposited KPI film. The mobility of Ph-BTBT-C10 thin-film transistors (TFTs) was approximately doubled, from 0.56 ± 0.05 cm2 V−1 s−1 to 1.26 ± 0.06 cm2 V−1 s−1, after the surface treatment. The surface treatment of α-Al2O3 and ODPA significantly decreased the threshold voltage from −21.2 V to −8.3 V by reducing the trap sites in the OGI and improving the interfacial properties with the OSC. |
| 저자 |
하태욱1, 유성미2, 문유경1, 가재원1, 김진수1, 원종찬1, 최동훈1, 장광석2, 김윤호3
|
| 소속 |
1한국화학(연), 2고려대, 3한경대 |
| 키워드 |
Thin-film transistor; metal oxide; self-assembled monolayer
|
| E-Mail |
|
