| 학회 |
한국고분자학회 |
| 학술대회 |
2015년 가을 (10/06 ~ 10/08, 대구컨벤션센터(EXCO)) |
| 권호 |
40권 2호 |
| 발표분야 |
분자전자 부문위원회 II |
| 제목 |
Large-area 20nm Nano-gap Electrode Array for High Performance Electronic Devices |
| 초록 |
Nano-gap electrodes separated from the molecular scale to the nanometer scale are fundamental building blocks for the fabrication of devices and circuits. Recently, large-area nano-gap electrodes fabrication for single molecules, including diodes, transistors, switches, and memory, has been central technical challenge for the device miniaturization. We report a new nanofabrication method for realizing controllable and large-area nano-gap electrode arrays with high efficiency and reproducibility. This method is the combination with chemical etching and an innovative technique called by secondary sputtering lithography. And this large-area nano-gap electrodes in a precise and controllable manner are fully compatible with previous nano-gap fabrication technology. |
| 저자 |
정희태1, 장성우1, 전환진1, 김종선1, 김명량2
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| 소속 |
1카이스트, 2KAIST |
| 키워드 |
Nanogap; Secondary Sputtering Lithography; Large-area
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| E-Mail |
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